FDFMA2P029Z

Integrated P-Channel PowerTrench^® MOSFET and Schottky Diode, -20V, 3.1A, 95mΩ

Overview

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses.
The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(on)= 95mΩ at V_GS= -4.5V, I_D = -3.1A
Max r_DS(on)= 141mΩ at V_GS = -2.5V, I_D = -2.5A
HBM ESD protection level > 2.5kV (Note 3)
Schottky
V_F < 0.37V @ 500mA
Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
RoHS Compliant

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDFMA2P029Z

Obsolete

WDFN-6

511DA

260

REEL

3000

-20

P-Channel

with Schottky Diode

-1.5

-3.1

1.4

141

540

Price N/A

FDFMA2P029Z-F106

Last Shipments

WDFN-6

511DA

260

REEL

3000

-20

P-Channel

with Schottky Diode

-1.5

-3.1

1.4

141

540

Price N/A

Product Number:

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MOSFETs | FDFMA2P029Z

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode, -20V, 3.1A, 95mΩ

Overview

Product List

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Integrated P-Channel PowerTrench^® MOSFET and Schottky Diode, -20V, 3.1A, 95mΩ