MOSFETs | FDFMA2P029Z

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode, -20V, 3.1A, 95mΩ

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Overview

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses.
The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 95mΩ at VGS = -4.5V, ID = -3.1A
  • Max rDS(on) = 141mΩ at VGS = -2.5V, ID = -2.5A
  • HBM ESD protection level > 2.5kV (Note 3)
    Schottky
  • VF < 0.37V @ 500mA
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
  • RoHS Compliant

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDFMA2P029Z-F106

Active

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

Y

P-Channel

with Schottky Diode

-20

12

-1.5

-3.1

1.4

141

95

-

-

7

540

$0.4308

More Details

FDFMA2P029Z

Last Shipments

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

N

P-Channel

with Schottky Diode

-20

12

-1.5

-3.1

1.4

141

95

-

-

7

540

Price N/A

More Details

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