FDD8876: N-Channel PowerTrench® MOSFET 30V, 73A, 8.2mΩ

Datasheet: FDD8876-D.pdf
Rev. A (533kB)
Product Overview
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Product Change Notification
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Features
 
  • RDS(ON) = 8.2 mΩ @ VGS = 10V @ ID = 35A
  • RDS(ON) = 10 mΩ @ VGS = 4.5V @ ID = 35A
  • High performance trench technology for extremely low rDS(ON)
  • Low gate charge
  • High power and current handling capability
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDD8876 Active
Pb-free
Halide free
FDD8876 DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.4089
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDD8876  
 $0.4089 
Pb
H
 Active   
N-Channel
Single
30
20
2.5
73
70
-
10
8.2
13
18
1700
DPAK-3 / TO-252-3
Case Outlines
369AS   
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