FDD6N50TM

500V N-Channel MOSFET 6A, 0.9Ω

Overview

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Applications

Infotainment
Portable Navigation
Infotainment
Other
Power Train
Safety and Control
Comfort and Convenience
Body Electronics
Vehicle Security Systems
Other Automotive

Features

6A, 500V
R_DS(on) = 0.9Ω @ V_GS = 10 V
Low gate charge (typical 12.8 nC)
Low C_rss (typical 9 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Qualified to AEC Q101
RoHS Compliant

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD6N50TM-F085

Last Shipments

DPAK-3 / TO-252-3

369AS

260

REEL

2500

500

900

N-Channel

Single

±30

12.8

720

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDD6N50TM_F085

500V N-Channel MOSFET 6A, 0.9Ω

Overview

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