MOSFETs | FDD6N50TM_F085

500V N-Channel MOSFET 6A, 0.9Ω

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Overview

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

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  • Infotainment
  • Other
  • Power Train
  • Safety and Control
  • Comfort and Convenience
  • Body Electronics
  • Vehicle Security Systems
  • Other Automotive
  • 6A, 500V
  • RDS(on) = 0.9Ω @ VGS = 10 V
  • Low gate charge (typical 12.8 nC)
  • Low Crss (typical 9 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • Qualified to AEC Q101
  • RoHS Compliant

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Package Type

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MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDD6N50TM-F085

Last Shipments

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

Single

500

±30

5

6

89

-

-

900

-

12.8

720

Price N/A

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