FDD4N60NZ: Power MOSFET, N-Channel, UniFETTM II, 600 V, 3.4 A, 2.5 Ω, DPAK

Datasheet: FDD4N60NZ-D.pdf
Rev. A (717kB)
Product Overview
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Product Change Notification
UniFETTM II MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features
 
  • RDS(on) = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.7A
  • Low gate charge ( Typ. 8.3nC)
  • Low Crss ( Typ. 3.7pF)
  • 100% avalanche tested
  • Improved dv/dt capability
  • ESD improved capability
  • RoHS compliant
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDD4N60NZ Active
Pb-free
Halide free
FDD4N60NZ DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.3259
Market Leadtime (weeks) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDD4N60NZ  
 $0.3259 
Pb
H
 Active   
N-Channel
Single
600
±25
5
3.4
114
-
-
2500
-
8.3
385
DPAK-3 / TO-252-3
Case Outlines
369AS   
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