MOSFETs | FDD4N60NZ

Power MOSFET, N-Channel, UniFETTM II, 600 V, 3.4 A, 2.5 Ω, DPAK

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Overview

UniFETTM II MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

  • This product is general usage and suitable for many different applications.
  • RDS(on) = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.7A
  • Low gate charge ( Typ. 8.3nC)
  • Low Crss ( Typ. 3.7pF)
  • 100% avalanche tested
  • Improved dv/dt capability
  • ESD improved capability
  • RoHS compliant

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Package Type

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MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDD4N60NZ

Last Shipments

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

Single

600

±25

5

3.4

114

-

-

2500

-

8.3

385

Price N/A

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