FDD4N60NZ

Power MOSFET, N-Channel, UniFET^TM II, 600 V, 3.4 A, 2.5 Ω, DPAK

Overview

UniFET^TM II MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Applications

This product is general usage and suitable for many different applications.

Features

R_DS(on) = 1.9Ω ( Typ.)@ V_GS = 10V, I_D = 1.7A
Low gate charge ( Typ. 8.3nC)
Low C_rss ( Typ. 3.7pF)
100% avalanche tested
Improved dv/dt capability
ESD improved capability
RoHS compliant

Material Composition

Product Change Notification

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V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDD4N60NZ

Last Shipments

DPAK-3 / TO-252-3

369AS

260

REEL

2500

N-Channel

Single

600

±25

3.4

114

2500

8.3

385

Price N/A

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MOSFETs | FDD4N60NZ

Power MOSFET, N-Channel, UniFETTM II, 600 V, 3.4 A, 2.5 Ω, DPAK

Overview

Availability & Samples (size)

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Power MOSFET, N-Channel, UniFET^TM II, 600 V, 3.4 A, 2.5 Ω, DPAK