FDD3680: 100V N-Channel PowerTrench® MOSFET 25A, 46mΩ

Datasheet: MOSFET – N-Channel, POWERTRENCH® 100 V
Rev. 4 (129kB)
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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
 
  • 25 A, 100 V.
  • RDS(ON) = 46 mΩ @ VGS = 10 V
  • RDS(ON) = 51 mΩ @ VGS = 6 V
  • Low gate charge (38 nC typical)
  • Fast switching speed
  • High performance trench technology for extremely RDS(ON)
  • High power and current handling capability
Applications
  • This product is general usage and suitable for many different applications.
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FDD3680 Last Shipments
Pb-free
FDD3680 DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500  
Market Leadtime (weeks) : Contact Factory
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369AS   
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