100V N-Channel PowerTrench® MOSFET 25A, 46mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

  • This product is general usage and suitable for many different applications.
  • 25 A, 100 V.
  • RDS(ON) = 46 mΩ @ VGS = 10 V
  • RDS(ON) = 51 mΩ @ VGS = 6 V
  • Low gate charge (38 nC typical)
  • Fast switching speed
  • High performance trench technology for extremely RDS(ON)
  • High power and current handling capability

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Status

ECAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDD3680

Last Shipments

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

N-Channel

Single

100

±20

4

25

68

-

-

46

-

38

1735

Price N/A

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