MOSFETs | FDD3510H

Dual N & P-Channel PowerTrench® MOSFET, 80V

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Overview

These dual N and P-Channel enhancement mode Power MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

  • This product is general usage and suitable for many different applications.
  • N-Channel: 80V, 13.9A, 80mΩ
  • P-Channel: -80V, -9.4A, 190mΩ
  • Q1: N-Channel
    Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
    Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A
  • Q2: P-Channel
    Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
    Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
  • 100% UIL Tested
  • RoHS Compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDD3510H

Last Shipments

Pb

A

H

P

DPAK-5

369AL

1

260

REEL

2500

N

Complementary

Dual

±80

±20

Q1: 4, Q2:-3

N:13.9, P: -9.4

Q1: 35, Q2: 32

-

-

N:80,P:190

-

14

N: 600, P: 660

Price N/A

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