Power MOSFET, N-Channel, Logic Level, UniFETTM, 200 V, 7.6 A, 360 mΩ, DPAK

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Overview

UniFETTM MOSFET is an high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

  • This product is general usage and suitable for many different applications.
  • RDS(on) = 300mΩ ( Typ.)@ VGS = 10V, ID = 3.8A
  • Low gate charge ( Typ. 12nC)
  • Low Crss ( Typ. 11pF)
  • 100% avalanche tested
  • Improved dv/dt capability
  • ESD improved capability
  • RoHS compliant

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Status

ECAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDD10N20LZTM

Last Shipments

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

N-Channel

Single

200

±20

3

7.6

83

-

400

360

-

12

440

Price N/A

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