MOSFETs | FDC6506P

Dual P-Channel PowerTrench® MOSFET, Logic Level, -30V, -1.8A, 170mΩ

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Overview

These P-Channel logic level MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

  • This product is general usage and suitable for many different applications.
  • -1.8 A, -30 V.
  • RDS(on) = 0.170 Ω @ VGS = -10 V
  • RDS(on) = 0.280 Ω @ VGS = -4.5 V
  • Low gate charge (2.3nC typical)
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC6506P

Last Shipments

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

P-Channel

Dual

-30

20

-3

-1.8

0.96

-

Q1=Q2=280

Q1=Q2=170

-

2.3

190

Price N/A

More Details

FDC6506P-NB4S006A

Obsolete

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

P-Channel

Dual

-30

20

-3

-1.8

0.96

-

Q1=Q2=280

Q1=Q2=170

-

2.3

190

Price N/A

More Details

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