FDC3535: P-Channel Power Trench® MOSFET, -80 V, -2.1 A, 183 mΩ

Datasheet: P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 m-Ohm
Rev. 2 (253kB)
Product Overview
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This P-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Features
 
  • Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
  • Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely usedsurface mount package
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
LIGHTING-1-GEVK Active
Pb-free
Connected Lighting Platform for LED Control
FutureElectronics (2020-08-19) : 4
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FDC3535 Lifetime
Pb-free
Halide free
FDC3535 TSOT-23-6 419BL 1 260 Tape and Reel 3000 $0.354
Market Leadtime (weeks) : Contact Factory
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419BL   
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