P-Channel Power Trench® MOSFET, -80 V, -2.1 A, 183 mΩ

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Overview

This P-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
  • Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely usedsurface mount package
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

ECAD Models

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MSL Temp (°C)

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Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC3535

Last Shipments

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

P-Channel

Single

-80

±20

-3

-2.1

1.6

-

233

183

-

6.8

659

Price N/A

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