FDC30N20DZ

Dual N-Channel PowerTrench^® MOSFET, 30V, 4.6A, 31mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process. This process has been optimized for r_DS(on), switching performance and ruggedness.

Features

Max r_DS(on) = 31 mΩ at V_GS = 10 V, I_D = 4.6 A
Max r_DS(on) = 38 mΩ at V_GS = 4.5 V, I_D = 4.2 A
High Performance Trench® Technology for Extremely Low r_DS(on)
Fast Switching Speed
100% UIL Tested
Typical CDM ESD protection level > 2.0 kV ( Note 5)
RoHS Compliant

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDC30N20DZ

Lifetime

TSOT-23-6

419BL

260

REEL

3000

N-Channel

Single

4.6

0.96

2.7

356

$0.2188

Product Number:

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MOSFETs | FDC30N20DZ

Dual N-Channel PowerTrench® MOSFET, 30V, 4.6A, 31mΩ

Overview

Availability & Samples (size)

Email Sales

Dual N-Channel PowerTrench^® MOSFET, 30V, 4.6A, 31mΩ