FDB3632: N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

Datasheet: MOSFET – Power, N-Channel, POWERTRENCH®100 V, 80 A, 9 mΩ
Rev. 5 (650kB)
Product Overview
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Product Change Notification
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.
Features
 
  • RDS(ON) = 7.5mΩ (Typ.) @ VGS = 10V, ID = 80A
  • QG(tot) = 84nC (Typ.) @ VGS = 10V
  • Low Miller Charge
  • Low QRR Body Diode
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • RoHS Compliant
Applications
  • AC-DC Merchant Power Supply - Servers & Workstations
  • Workstation
  • Server & Mainframe
  • Other Data Processing
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDB3632 Active
Pb-free
Halide free
FDB3632 D2PAK-3 / TO-263-2 418AJ 1 245 Tape and Reel 800 $1.5014
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19) : <1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDB3632  
 $1.5014 
Pb
H
 Active   
N-Channel
Single
100
±20
4
80
310
-
-
9
-
84
6000
D2PAK-3 / TO-263-2
Case Outlines
418AJ   
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