N-Channel PowerTrench® MOSFET 60V, 80A, 6.1mΩ

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Overview

N-Channel PowerTrench® MOSFET 60V, 80A, 6.1mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.

  • rDS(ON) = 6.1mΩ (Typ.), VGS = 10V, ID = 80A
  • Qg(tot) = 51nC (Typ.), VGS = 10V
  • Low Miller Charge
  • Low QRR Body Diode
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • Qualified to AEC Q101
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDB070AN06A0-F085

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Lifetime

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

N

60

7

N-Channel

Single

20

4

80

175

-

-

-

51

3000

$2.2909

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