Power MOSFET, N-Channel, SuperFET® II, FAST, 600V, 4.5A, 900mΩ, IPAK

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Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

  • This product is general usage and suitable for many different applications.
  • 675V @TJ = 150°C
  • Max. RDS(on) = 900mΩ
  • Ultra low gate charge ( Typ. Qg = 13nC )
  • Low effective output capacitance ( Typ. Coss.eff = 49pF )
  • 100% avalanche tested
  • ESD improved capacity

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCU900N60Z

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Last Shipments

CAD Model

Pb

A

H

P

IPAK-3 / DPAK-3 STRAIGHT LEAD

NA

0

TUBE

1800

N

600

900

N-Channel

Single

DC: ±20, AC: ±30

3.5

4.5

52

-

-

-

13.1

534

Price N/A

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