FCP650N80Z: Power MOSFET, N-Channel, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220

Datasheet: FCP650N80Z - N-Channel SuperFET® II MOSFET
Rev. A (667kB)
Product Overview
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Product Change Notification
SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications.
Features
 
  • RDS(on) = 530 mΩ(Typ.)
  • Ultra Low Gate Charge (Typ. Qg = 27 nC)
  • Low Eoss (Typ. 2.8 uJ @ 400V)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability
Applications   End Products
  • AC-DC Power Supplies
 
  • LED Lighting
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FCP650N80Z Active
Pb-free
Halide free
FCP650N80Z TO-220-3 340AT NA Tube 800 $1.1921
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FCP650N80Z  
 $1.1921 
Pb
H
 Active   
N-Channel
Single
800
DC: ±20, AC: ±30
4.5
10
162
-
-
650
-
27
1178
TO-220-3
Case Outlines
340AT   
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