Power MOSFET, N-Channel, SUPERFET® II, 800 V, 17 A, 290 mΩ, TO-220

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Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

  • AC-DC Power Supplies
  • LED Lighting
  • Typ. RDS(on) = 0.245 Ω
  • Ultra Low Gate Charge (Typ. Qg = 58 nC)
  • Low Eoss (Typ. 5.6 uJ @ 400 V)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

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V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FCP290N80

Lifetime

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

N

N-Channel

Single

800

DC: ±20, AC: ±30

4.5

17

212

-

-

290

-

58

2410

$2.6198

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