MOSFETs | FQD3P50TM_F085

500V P-Channel MOSFET

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Overview

These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.

  • Power Train
  • - 2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V
  • Low gate charge ( typical 18 nC)
  • Low Crss ( typical 9.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • Qualified to AEC Q101
  • RoHS Compliant

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