Power MOSFET, N-Channel, QFET®, 800 V, 3.3 A, 1.95 Ω, TO-220F

Obsolete

Overview

This N-Channel enhancement mode power MOSFET is produced using onsemi Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

  • LCD TV
  • Home Audio System Components

  • 3.3A, 800V, RDS(on) = 1.95Ω(Max.) @VGS = 10 V, ID = 1.65A
  • Low gate charge ( Typ. 31nC)
  • Low Crss ( Typ. 14pF)
  • 100% avalanche tested
  • 100% package isolation tested

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQPF6N80T

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

TO-220FP

High Voltage

Standard

0

Single

0

800

1950

±30

5

3.3

51

-

-

-

31

1150

15

5700

125

14

Price N/A

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