Silicon Carbide (SiC) MOSFETs
The portfolio of Silicon Carbide (SiC) MOSFETs from ON Semiconductor are designed to be fast and rugged. Silicon Carbide (SiC) MOSFETs have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy bad gap, and 3x higher thermal conductivity. All of ON Semiconductor’s SiC MOSFETs include AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive and industry applications. System benefits include highest efficiency by lowering power loss, greater power density, higher operating frequency, increased temperature operation, reduced EMI, and most importantly reduced system size and cost.
SiC MOSFETs: Gate Drive Optimization
For high−voltage switching power applications, silicon carbide or SiC MOSFETs bring notable advantages compared to traditional silicon MOSFETs and IGBTs.
Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices
Efficient power electronic design hinges on the availability of accurate and predictive SPICE models. This paper proposes novel physical and scalable SPICE models for power electronic semiconductors including...
The Difference Between GaN and SiC Transistors
For decades, silicon has dominated the transistor world. But that has been gradually changing. Compound semiconductors made of two or three materials have been developed and offer...