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NVHL080N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L

Datasheet: MOSFET - SiC Power, Single N-Channel
Rev. 3 (291kB)
Product Overview
»View Material Composition
» Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • 1200V rated
 
  • Typical RDS(on) = 80mΩ
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
   
  • High Speed Switching and Low Capacitance
   
  • 100% UIL Tested
   
  • Qualified for Automotive According to AEC−Q101
   
  • Devices are Pb−Free and are RoHS Compliant
   
Applications   End Products
  • PFC
  • OBC
 
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Automotive Auxiliary Motor Drive
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
SEC-3PH-11-OBC-EVB Active
Pb-free
Three-phase On Board Charger (OBC) PFC-LLC platform
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVHL080N120SC1 Active, Not Rec
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVHL080N120SC1 TO-247-3LD 340CX NA Tube 450 $5.9999
Market Leadtime (weeks) : Contact Factory
FutureElectronics   (2020-08-19) : <1K
Case Outlines
340CX   
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Featured Video
Overview of Wide Bandgap and Silicon Carbide (SiC) Capabilities
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