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NVH4L015N065SC1: Silicon Carbide MOSFET, N‐Channel, 650V, 12 mΩ, TO247−4L

Datasheet: MOSFET - SiC Power, Single N-Channel, TO247-4, 650 V, 12 mOhm, 142 A
Rev. 2 (220kB)
Product Overview
»View Material Composition
» Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Qualified for Automotive According to AEC−Q101
 
  • Automotive grade
  • 650V rated
   
  • Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A
   
  • High Speed Switching and Low Capacitance
   
  • 100% UIL Tested
   
  • Devices are RoHS Compliant
   
Applications   End Products
  • Automotive DC/DC and PFC
  • Automotive Traction Inverter
 
  • Automotive On Board Charger
  • Automotive Traction Inverter
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVH4L015N065SC1 Active 
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVH4L015N065SC1 TO-247-4 340CJ 1 260 Tube 450 $13.9997
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVH4L015N065SC1  
 $13.9997 
Pb
A
H
P
 Active   
N-Channel
Single
650
142
12
283
424
175
TO-247-4
Case Outlines
340CJ   
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