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NTHL080N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L

Datasheet: MOSFET — Power, N-Channel, Silicon Carbide, TO-247-3L, 1200 V, 80 mΩ, 31 A
Rev. 4 (246kB)
Product Overview
»View Material Composition
» Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • 1200V rated
 
  • Typical RDS(on) = 80mΩ
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
   
  • High Speed Switching and Low Capacitance
   
  • 100% UIL Tested
   
Applications   End Products
  • PFC
  • Boost Inverter
  • PV Charging
 
  • Solar Inverter
  • Network Power Supply
  • Server Power Supply
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTHL080N120SC1 Active, Not Rec
Pb-free
Halide free
NTHL080N120SC1 TO-247-3LD 340CX NA Tube 450 $5.9999
Market Leadtime (weeks) : 8 to 12
FutureElectronics   (2020-08-19 00:00) : <1K
ON Semiconductor   (2020-09-02 00:00) : 13,050
Avnet   (2020-08-19 00:00) : <1K
Case Outlines
340CX   
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