feedback
Rate this webpage
Need
Support?

NTH4L015N065SC1: Silicon Carbide MOSFET, N‐Channel, 650V, 15.6 mΩ, TO247−4L

Datasheet: MOSFET - SiC Power, Single N-Channel, TO247-4L
Rev. 1 (269kB)
Product Overview
»View Material Composition
» Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • High Junction Temperature
 
  • Tj = 175°C
  • 100% UIL Tested
   
  • RoHS Compliant
   
  • High Speed Switching and Low Capacitance
   
  • 650V rated
   
  • Max RDS(on) = 18.7 mΩ at Vgs = 18V, Id = 60A
   
Applications   End Products
  • DC-DC Converter
  • Boost Inverter
 
  • UPS
  • Solar
  • Power Supply
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTH4L015N065SC1 Active 
AEC Qualified
PPAP Capable
Pb-free
Halide free
NTH4L015N065SC1 TO-247-4 340CJ NA Tube 450 $16.0516
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTH4L015N065SC1  
 $16.0516 
Pb
A
H
P
 Active   
N-Channel
Single
650
164
15.6
251
397
175
TO-247-4
Case Outlines
340CJ   
Previously Viewed Products
Clear List

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.