NTH4L015N065SC1: Silicon Carbide MOSFET, N‐Channel, 650V, 15.6 mΩ, TO247−4L
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
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Technical Documentation & Design Resources
| Simulation Models (3) | Package Drawings (1) |
| Data Sheets (1) |
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Specifications
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| NTH4L015N065SC1 |
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NTH4L015N065SC1 | TO-247-4 | 340CJ | NA | Tube | 450 | $16.0516
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| Market Leadtime (weeks) | : | Contact Factory |
Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTH4L015N065SC1
$16.0516
Pb
A
H
P
Active
N-Channel
Single
650
164
15.6
251
397
175
TO-247-4
Case Outlines
340CJ
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