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FQP13N10: Power MOSFET, N-Channel, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220

Datasheet: FQP13N10-D.pdf
Rev. A (771kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
 
  • 12.8A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 6.4A
  • Low gate charge ( Typ. 12nC)
  • Low Crss ( Typ. 20pF)
  • 100% avalanche tested
  • 175°C maximum junction temperature rating
Applications
  • Other Audio & Video
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQP13N10 Active
Pb-free
Halide free
FQP13N10 TO-220-3 340AT NA Tube 1000 $0.3916
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FQP13N10  
 $0.3916 
Pb
H
 Active   
N-Channel
Single
100
±20
4
12.8
65
-
-
180
-
12
345
TO-220-3
Case Outlines
340AT   
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