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FDN336P: Single P-Channel Logic Level PowerTrench® MOSFET -20V, -1.3A, 200mΩ

Datasheet: Single P-Channel 2.5V Specified PowerTrench® MOSFET
Rev. 4 (196kB)
Product Overview
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This P-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.
Features
 
  • -1.3 A, -20 V.
  • RDS(ON) = 0.20Ω @ VGS= -4.5 V
  • RDS(ON) = 0.27 Ω @ VGS= -2.5 V
  • Low gate charge (3.6 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOT™ -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 inthe same footprint
Applications   End Products
  • This product is general usage and suitable for many different applications.
  • Load Switch
  • Power Management
  • DC/DC converter
  • Battery Charging Circuit
 
  • Portable Electronics
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDN336P Active
Pb-free
Halide free
FDN336P SOT-23-3 527AG 1 260 Tape and Reel 3000 $0.1863
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : >10K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDN336P  
 $0.1863 
Pb
H
 Active   
P-Channel
Single
-20
8
-1.5
-1.3
0.5
270
200
-
4.4
3.6
330
SOT-23-3
Case Outlines
527AG   
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