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FDMS86181: N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ

Datasheet: MOSFET, N-Channel, Shielded Gate, POWERTRENCH - 100 V, 124 A, 4.2 mΩ
Rev. 2 (230kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
 
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
  • Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
  • ADD
  • 50% lower Qrr than other MOSFET suppliers
  • Lowers switching noise/EMI
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMS86181 Active
Pb-free
Halide free
FDMS86181 PQFN-8 483AE 1 260 Tape and Reel 3000 $1.3044
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMS86181  
 $1.3044 
Pb
H
 Active   
N-Channel
Single
100
±20
4
124
125
-
-
4.2
-
27
2945
PQFN-8
Case Outlines
483AE   
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