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FDG313N: N-Channel Digital FET 25V, 0.95A, 0.45Ω

Datasheet: Digital FET, N-Channel
Rev. 3 (170kB)
Product Overview
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» Product Change Notification
This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
Features
 
  • 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V. RDS(on) = 0.60 Ω @ VGS = 2.7 V.
  • Low gate charge (1.64 nC typical)
  • Very low level gate drive requirements allowing directoperation in 3V circuits (VGS(th)1.5V).
  • Gate-Source Zener for ESD ruggedness(6kV Human Body Model).
  • Compact industry standard SC70-6 surface mountpackage.
Applications
  • This product is general usage and suitable for many different applications.
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDG313N Obsolete
Pb-free
Halide free
FDG313N SC-88-6 / SC-70-6 / SOT-363-6 419AD 1 260 Tape and Reel 3000  
Market Leadtime (weeks) : Contact Factory
Case Outlines
419AD   
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