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FDG312P: P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ

Datasheet: P-Channel 2.5V Specified PowerTrench MOSFET
Rev. 3 (200kB)
Product Overview
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This P-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Features
 
  • -1.2 A, -20 V
  • RDS(on) = 0.18 Ω @ VGS = -4.5 V
  • RDS(on) = 0.25 Ω @ VGS = -2.5 V
  • Low gate charge (3.3 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • Compact industry standard SC70-6 surface mount package.
Applications
  • This product is general usage and suitable for many different applications.
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDG312P Last Shipments
Pb-free
Halide free
FDG312P SC-88-6 / SC-70-6 / SOT-363-6 419B-02 1 260 Tape and Reel 3000  
Market Leadtime (weeks) : Contact Factory
Case Outlines
419B-02   
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