feedback
Rate this webpage
Need
Support?

FDG311N: N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ

Datasheet: FDG311N-D.pdf
Rev. A (203kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This N-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Features
 
  • 1.9 A, 20 V
  • RDS(ON) = 0.115 Ω @ VGS = 4.5 V
  • RDS(ON) = 0.150 Ω @ VGS = 2.5 V
  • Low gate charge (3nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • Compact industry standard SC70-6 surface mountpackage.
Applications
  • This product is general usage and suitable for many different applications.
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDG311N Last Shipments
Pb-free
Halide free
FDG311N SC-88-6 / SC-70-6 / SOT-363-6 419B-02 1 260 Tape and Reel 3000  
Market Leadtime (weeks) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 69,000
Case Outlines
419B-02   
Previously Viewed Products
Clear List

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.