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NGTB75N60FL2: IGBT, 600V 75A FS2 Solar/UPS

Datasheet: IGBT
Rev. 5 (239kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
 
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short−Circuit Capability
Applications
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Welding
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NGTB75N60FL2WG Last Shipments
Pb-free
Halide free
NGTB75N60FL2 TO-247-3 340AL NA Tube 30  
Market Leadtime (weeks) : Contact Factory
Case Outlines
340AL   
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