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NGTB40N120L3: IGBT, Ultra Field stop - 1200V 40A, Low VCEsat

Datasheet: IGBT - Ultra Field Stop
Rev. 2 (155kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features
 
  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • These are Pb−Free Devices
Applications   End Products
  • Motor Drive Inverter
  • Industrial Switching
  • Welding
 
  • Industrial
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NGTB40N120L3WG Active
Pb-free
Halide free
NGTB40N120L3 TO-247-3 340AL NA Tube 30 Contact Sales Office
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19) : <100

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
NGTB40N120L3WG  
Pb
H
 Active   
1200
40
1.55
3
1.5
1.5
86
12
220
-
-
454
Yes
TO-247-3
Case Outlines
340AL   
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