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FGH50T65SQD-F155: IGBT, 650 V, 50A Field Stop 4 Trench

Datasheet: IGBT - Field Stop, Trench 650 V, 50 A
Rev. 3 (379kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features
 
  • Maximum Junction Temperature: TJ =175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A
  • 100% of the Parts Tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant
Applications
  • Industrial inverter
  • UPS
  • Welder
  • PFC
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FGH50T65SQD-F155 Active
Pb-free
Halide free
FGH50T65SQD-F155 TO-247-3 340CH NA Tube 450 $2.3066
Market Leadtime (weeks) : 4 to 8

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
FGH50T65SQD-F155  
 $2.3066 
Pb
H
 Active   
650
2.2
0.11
0.402
-
99
-
-
268
TO-247-3
Case Outlines
340CH   
Previously Viewed Products
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