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AFGHL50T65SQDC: Hybrid IGBT, 650V, 50A Fieldstop 4 trench IGBT with SiC-SBD

Datasheet: Hybrid IGBT, 50 A, 650 V
Rev. 3 (241kB)
Product Overview
»View Material Composition
» Product Change Notification
Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.
Features   Benefits
     
  • Copacked with SiC schottky barrier diode
 
  • Ultra low reverse recovery loss
  • Maximum Junction Temperature, Tj=175°C
 
  • Higher reliability
  • Automotive Qualified
   
  • Very low switching and conduction losses
   
  • Positive temperature co-efficient
   
  • 100% of the parts are dynamically tested
   
  • Tight parameter distribution
   
Applications   End Products
  • Automotive
  • Industrial Inverter
  • DC-DC Converter
  • PFC, Totem Pole Bridgeless
  • Hard Switching
 
  • xEV On & Off board charger
  • UPS
  • Solar Inverter
  • HVAC
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
AFGHL50T65SQDC Active
AEC Qualified
PPAP Capable
Pb-free
AFGHL50T65SQDC TO-247-3LD 340CX NA Tube 450 $5.9999
Market Leadtime (weeks) : 8 to 12
Avnet   (2020-08-19 00:00) : <1K

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
AFGHL50T65SQDC  
 $5.9999 
Pb
A
P
 Active   
650
50
1.6
1.45
94
Yes
TO-247-3LD
Case Outlines
340CX   
Previously Viewed Products
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