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NCP51810: High Performance, 150 V Half Bridge Gate Driver for GaN Power Switches

Datasheet: High Speed Half-Bridge Driver for GaN Power Switches
Rev. 1 (692kB)
Product Overview
»View Material Composition
» Product Change Notification
The NCP51810 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51810 offers short and matched propagation delays as well as −3.5 V to +150 V (typical) common-mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51810 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.
Features   Benefits
     
  • 150 V, high side and low side gate driver
 
  • Support 48 V input design with sufficient safety margin
  • Fast propagation delay of 50 ns max
 
  • Suitable for high frequency operation
  • Fast propagation delay of 50 ns max
 
  • Increased efficiency and allow paralleling
  • 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry
 
  • Robust design for high switching frequency application
  • Separate source and sink output pin
 
  • Allow control of rise and fall time for EMI tuning
  • Regulated 5.2 V gate driver with independent UVLO for high side and low side output stages
 
  • Optimum driving of GaN power switches and simplify design
  • QFN 4 mm x 4 mm 15 pin packaging and optimized pin out
 
  • Small PCB foot print, reduced parasitic, suitable for high frequency operation
Applications   End Products
  • Resonant converters
  • Half bridge and full bridge converters
  • Active clamp flyback converters
  • Non isolated step down converters
 
  • Data center 48 V to low voltage intermediate bus converter
  • 48 V to PoL converter
  • Industrial power module
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
NCP51810GAN1GEVB Active
Pb-free
100V eGaN Half Bridge Gate Driver Evaluation Board
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NCP51810AMNTWG Active
Pb-free
Halide free
NCP51810, 150 V Half Bridge Gate Driver for GaN Power Switches QFN-15 485FN 1 260 Tape and Reel 4000 $0.9333
Market Leadtime (weeks) : 17 to 20

Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Drive Source/Sink Typ (mA)
Rise Time (ns)
Fall Time (ns)
tp Max (ns)
Package Type
NCP51810AMNTWG  
 $0.9333 
Pb
H
 Active   
GaN
2
Half-Bridge
Junction Isolation
150
20
1000 / 2000
2
1.5
50
QFN-15
Case Outlines
485FN   
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Featured Video
150V Half Bridge Gate Driver
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