MBRAF360: 3 A, 60 V Schottky Rectifier
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This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
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Technical Documentation & Design Resources
| Software (1) | Package Drawings (1) |
| Design Notes (2) | Videos (1) |
| Simulation Models (4) | Evaluation Board Documents (2) |
| Data Sheets (1) |
Evaluation/Development Tool Information
| Product | Status | Compliance | Short Description | Action | |
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| STR-ADAS-PREREGULATOR-GEVK | Active |
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Strata Enabled Flexible ADAS Power Solution |
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Availability & Samples
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Specifications
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Case Outline |
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| MBRAF360T3G | Active |
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MBRAF360 | SMA-FL | 403AA | 1 | 260 | Tape and Reel | 5000 | $0.1567
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| NRVBAF360T3G | Active |
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MBRAF360 | SMA-FL | 403AA | 1 | 260 | Tape and Reel | 5000 | $0.1333
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| Market Leadtime (weeks) | : | 17 to 20 |
| Market Leadtime (weeks) | : | Contact Factory |
Product
Description
Pricing ($/Unit)
Compliance
Status
Configuration
VRRM Min (V)
VF Max (V)
IRM Max (µA)
IO(rec) Max (A)
IFSM Max (A)
trr Max (ns)
Cj Max (pF)
Package Type
Case Outlines
403AA
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