The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. The Schottky Rectifier features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
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Highly Stable Oxide Passivated Junction
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Guardring for Over-Voltage Protection
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Dual Diode Construction - Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating
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Full Electrical Isolation without Additional Hardware
Mechanical Characteristics:
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Epoxy Meets UL94, VO at 1/8"
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Weight: 4.3 grams (approximately)
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Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
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Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
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Shipped 30 Units Per Plastic Tube
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Pb-Free Package is Available
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