SI3443DV

P-Channel 2.5V Specified PowerTrench^® MOSFET -20V, -4A, 65mΩ

Overview

This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.

Applications

This product is general usage and suitable for many different applications.

Features

-4 A, -20 V
R_DS(ON) = 0.065Ω @ V_GS = -4.5 V
R_DS(ON) = 0.100Ω @ V_GS = -2.5 V
Fast switching speed
Low gate charge (7.2nC typical)
High performance trench technology for extremely low R_DS(ON)
SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick)

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

SI3443DV

Last Shipments

TSOT-23-6

419BL

260

REEL

3000

-20

P-Channel

Single

-1.5

-4

1.6

100

7.2

640

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | SI3443DV

P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -4A, 65mΩ

Overview

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P-Channel 2.5V Specified PowerTrench^® MOSFET -20V, -4A, 65mΩ