N-Channel Power MOSFET 30 V, 20 A, 27 mΩ

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Overview

Automotive Power MOSFET. This logic level vertical power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The drain-to-source diode has a ideal fast but soft recovery. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

  • Power Supplies
  • Inductive Loads
  • PWM Motor Controls
  • Replaces MTD20N03L in many applications
  • Ultra-Low RDS(on) , single base, advanced technology
  • SPICE parameters available
  • Diode is characterized for use in bridge circuits
  • IDSS and VDS(on) specified at elevated temperatures
  • High Avalanche Energy Specified
  • ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
  • AEC−Q101 Qualified and PPAP Capable
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NVD20N03L27T4G

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

1

260

REEL

2500

N

30

-

N-Channel

Single

20

2

20

74

-

29

-

13.8

1005

Price N/A

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