MLP2N06CL: 62 V, 2.0 A Power MOSFET, Logic Level

Datasheet: MOSFET 2 Amps, 62 Volts, Logic Level
Rev. 3 (182kB)
Product Overview
View Material Composition
Product Change Notification
This logic level power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and technology for low on-resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition.

The internal Gate-Source and Gate-Drain clamps allow the device to be applied without use of external transient suppression components. The Gate-Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate-Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature.
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
MLP2N06CLG Obsolete
Pb-free
MLP2N06CL TO-220-3 221A-09 NA Tube 50  
MLP2N06CL Obsolete
MLP2N06CL TO-220-3 221A-09 NA Tube 50  
Market Leadtime (weeks) : Contact Factory
Market Leadtime (weeks) : Contact Factory
Case Outlines
221A-09   
Packages
MLP2N06CL: 62 V, 2.0 A Power MOSFET, Logic Level
Previously Viewed Products
Clear List

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.