IRLS640A

Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 9.8 A, 180 mΩ, TO-220F

Overview

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, ad withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Applications

Other Industrial

Features

9.8 A, 200 V
r_DS(ON) = 180 mΩ @ V_GS = 5 V
Low Gate Charge (Typ. 40 nC)
Low C_rss (Typ. 95 pF)
Fast Switching Speed
100% Avalanche Tested
Improved dv/dt Capability
Logic-Level Gate Drive

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

IRLS640A

Last Shipments

TO-220-3 FullPak

221AT

TUBE

1000

200

N-Channel

Single

±20

9.8

180

5.6

1310

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | IRLS640A

Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 9.8 A, 180 mΩ, TO-220F

Overview

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