IRLS640A: Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 9.8 A, 180 mΩ, TO-220F

Datasheet: IRLS640A-D.pdf
Rev. A (706kB)
Product Overview
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Product Change Notification
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, ad withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features
 
  • 9.8 A, 200 V
    rDS(ON) = 180 mΩ @ VGS = 5 V
  • Low Gate Charge (Typ. 40 nC)
  • Low Crss (Typ. 95 pF)
  • Fast Switching Speed
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • Logic-Level Gate Drive
Applications
  • Other Industrial
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
IRLS640A Active
Pb-free
IRLS640A TO-220-3 FullPak 221AT NA Tube 1000 $0.8222
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
IRLS640A  
 $0.8222 
Pb
 Active   
N-Channel
Single
200
±20
2
9.8
40
-
180
-
5.6
40
1310
TO-220-3 FullPak
Case Outlines
221AT   
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