Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 9.8 A, 180 mΩ, TO-220F

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Overview

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, ad withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

  • Other Industrial
  • 9.8 A, 200 V
    rDS(ON) = 180 mΩ @ VGS = 5 V
  • Low Gate Charge (Typ. 40 nC)
  • Low Crss (Typ. 95 pF)
  • Fast Switching Speed
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • Logic-Level Gate Drive

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

IRLS640A

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

N

200

-

N-Channel

Single

±20

2

9.8

40

-

180

5.6

40

1310

Price N/A

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