MOSFETs | IRF640

OBSOLETE - Power Field Effect Transistor

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Overview

This TMOS Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

  • Silicon Gate for Fast Switching Speeds
  • Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperature.
  • Rugged - SOA is Power Dissipation Limited
  • Source-to-Drain Diode Characterized for Use With Inductive Loads

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