FQT13N06L

Power MOSFET, N-Channel, Logic Level, QFET^®, 60 V, 2.8 A, 110 mΩ, SOT-223

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Overview

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Applications

LED TV
Consumer Appliances
Other Industrial

Features

2.8A, 60V, R_DS(on)= 110mΩ(Max.) @V_GS = 10 V, I_D = 1.4A
Low gate charge ( Typ. 4.8nC)
Low C_rss ( Typ. 17pF)
100% avalanche tested

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Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FQT13N06LTF

Lifetime

SOT-223-4 / TO-261-4

318H-01

260

REEL

4000

N-Channel

Single

±20

2.5

2.8

2.1

140

110

4.8

270

$0.2483

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MOSFETs | FQT13N06L

Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223

Overview

Availability & Samples (size)

Email Sales

Power MOSFET, N-Channel, Logic Level, QFET^®, 60 V, 2.8 A, 110 mΩ, SOT-223