Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223

Overview

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

  • LED TV
  • Consumer Appliances
  • Other Industrial
  • 2.8A, 60V, RDS(on) = 110mΩ(Max.) @VGS = 10 V, ID = 1.4A
  • Low gate charge ( Typ. 4.8nC)
  • Low Crss ( Typ. 17pF)
  • 100% avalanche tested

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Product

Status

CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FQT13N06LTF

Last Shipments

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

260

REEL

4000

N

N-Channel

Single

60

±20

2.5

2.8

2.1

-

140

110

-

4.8

270

Price N/A

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