FQT13N06L: Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223

Datasheet: FQT13N06L-D.pdf
Rev. A (908kB)
Product Overview
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This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
 
  • 2.8A, 60V, RDS(on) = 110mΩ(Max.) @VGS = 10 V, ID = 1.4A
  • Low gate charge ( Typ. 4.8nC)
  • Low Crss ( Typ. 17pF)
  • 100% avalanche tested
Applications
  • LED TV
  • Consumer Appliances
  • Other Industrial
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
SECO-RANGEFINDER-GEVK Active
Pb-free
SiPM Direct Time of Flight (dToF) LiDAR
Product
Status
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Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
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Type
Qty.
FQT13N06LTF Lifetime
Pb-free
FQT13N06L SOT-223-4 / TO-261-4 318H-01 1 260 Tape and Reel 4000 $0.2483
Market Leadtime (weeks) : Contact Factory
Case Outlines
318H-01   
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