FQPF3N25: Power MOSFET, N-Channel, QFET®, 250 V, 2.3 A, 2.2 Ω, TO-220F

Datasheet: FQPF3N25-D.pdf
Rev. A (895kB)
Product Overview
View Reliability Data
View Material Composition
Product Change Notification
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters, switch mode power supply.
Features
 
  • 2.3 A, 250 V, RDS(on) = 2.2 Ω (Max.) @ VGS = 10 V, ID = 1.15 A
  • Low Gate Charge (Typ. 4.0 nC)
  • Low Crss (Typ. 4.7 pF)
  • 100% Avalanche Tested
Applications
  • High Efficiency Switching DC/DC Converters
  • Switched Mode Power Supplies
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQPF3N25 Active
Pb-free
FQPF3N25 TO-220-3 FullPak 221AT NA Tube 1000 $0.4069
Market Leadtime (weeks) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 8,000

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FQPF3N25  
 $0.4069 
Pb
 Active   
N-Channel
250
5
5
2.3
27
-
-
2200
-
4
4
130
TO-220-3 FullPak
Case Outlines
221AT   
Previously Viewed Products
Clear List

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.