FQB6N40C

Power MOSFET, N-Channel, QFET^®, 400 V, 6 A, 1.0 Ω, D2PAK

Overview

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

Applications

High Efficiency Switched Mode Power Supplies
Electronic Lamp Ballasts based on Half Bridge Topology

Features

6 A, 400 V, R_DS(on) = 1.0 Ω (Max.) @ V_GS = 10 V, I_D = 3 A
Low Gate Charge (Typ. 16nC)
Low Crss (Typ. 15pF)
100% Avalanche Tested

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQB6N40CTM

Last Shipments

D2PAK-3 / TO-263-2

418AJ

245

REEL

800

400

1000

N-Channel

Single

480

Price N/A

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MOSFETs | FQB6N40C

Power MOSFET, N-Channel, QFET®, 400 V, 6 A, 1.0 Ω, D2PAK

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Power MOSFET, N-Channel, QFET^®, 400 V, 6 A, 1.0 Ω, D2PAK