FQA38N30: N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ

Datasheet: FQA38N30-D.pdf
Rev. A (522kB)
Product Overview
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These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Features
 
  • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A
  • Low Gate Charge (Typ. 90 nC)
  • Low Crss (Typ. 70 pF)
  • 100% Avalanche Tested
  • RoHS compliant
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQA38N30 Active, Not Rec
Pb-free
FQA38N30 TO-3P-3L 340BZ NA Tube 450 $3.2358
Market Leadtime (weeks) : 2 to 4
ON Semiconductor   (2020-09-02 00:00) : 4,500
Case Outlines
340BZ   
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