FQA36P15: Power MOSFET, P-Channel, QFET®, -150 V, -36 A, 90 mΩ, TO-3P

Datasheet: FQA36P15-D.pdf
Rev. A (2374kB)
Product Overview
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Product Change Notification
This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
 
  • -36A, -150V
    RDS(on) = 90mΩ(Max.) @VGS = -10 V, ID = -18A
  • Low Gate Charge ( Typ. 81nC)
  • Low Crss ( Typ. 110pF)
  • 100% Avalanche Tested
  • 175°C Maximum Junction Temperature Rating
Applications
  • Other Audio & Video
  • Switched Mode Power Supplies
  • Audio Amplifiers
  • DC Motor Control
  • Variable Switching Power Applications
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQA36P15 Active
Pb-free
FQA36P15 TO-3P-3L 340BZ NA Tube 450 $1.4812
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : <100

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FQA36P15  
 $1.4812 
Pb
 Active   
P-Channel
Single
-150
±30
-4
-36
294
-
-
90
-
81
2550
TO-3P-3L
Case Outlines
340BZ   
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