FQA19N60: Power MOSFET, N-Channel, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P

Datasheet: FQA19N60-D.pdf
Rev. A (1810kB)
Product Overview
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Product Change Notification
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
 
  • 18.5A, 600V
    RDS(on) = 380mΩ(Max.) @VGS = 10 V, ID = 9.3A
  • Low gate charge ( Typ. 70nC)
  • Low Crss ( Typ. 35pF)
  • 100% avalanche tested
Applications
  • Desktop PC
  • AC-DC Merchant Power Supply - Desktop PC
  • Switched Mode Power Supplies
  • Active Power Factor Correction (PFC)
  • Electronic Lamp Ballasts
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQA19N60 Active
Pb-free
FQA19N60 TO-3P-3L 340BZ NA Tube 450 $5.4357
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FQA19N60  
 $5.4357 
Pb
 Active   
N-Channel
Single
600
±30
5
18.5
300
-
-
380
-
70
2800
TO-3P-3L
Case Outlines
340BZ   
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