P-Channel 2.5V Specified MOSFET, -20V, -3.5A, 130mΩ

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Overview

This P-Channel 2.5V specified MOSFET is produced using a proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

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  • -3.5 A, -20 V
     RDS(ON) = 0.130 Ω@ VGS = -4.5 V
     RDS(ON) = 0.180 Ω @ VGS = -2.5 V
  • Fast switching speed
  • High density cell design for extremely low DS(ON)
  • High power and current handling capability
  • Qualified to AEC Q101
  • RoHS Compliant

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDS9431A-F085

Last Shipments

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

P-Channel

Single

-20

8

-1

-3.5

2.5

180

130

0.13

6.2

6

405

Price N/A

More Details

FDS9431A-TF085

Obsolete

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

P-Channel

Single

-20

8

-1

-

2.5

180

130

-

6.2

-

405

Price N/A

More Details

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