Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET, 25V

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Overview

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

  • Distribution
  • Notebook PC
  • Q1: N-Channel
    Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 Al
    Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 Al
  • Q2: N-Channel
    Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 Al
    Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 Al
  • Low inductance packaging shortens rise/fall times, resulting in lower switching lossesl
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringingl
  • RoHS Compliantl

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS3624S

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

25

Q1: 5.0, Q2: 1.8

N-Channel

Dual

12

Q1: 2.0, Q2: 2.2

Q1: 17.5, Q2: 30.0

Q1:2.2, Q2: 2.5

-

Q1: 5.7, Q2: 2.2

30

27

4045

Price N/A

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