Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V

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Overview

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.

  • Notebook PC
  • Q1: N-Channel
    Maximum RDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
    Maximum RDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A
  • Q2: N-Channel
    Maximum RDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A
    Maximum RDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS3600S

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

25

Q1: 5.6, Q2: 1.6

N-Channel

Dual

20

Q1:2.7, Q2:3

Q1: 15.0, Q2: 30.0

Q1: 2.2, Q2: 2.5

-

Q1: 8.1, Q2: 2.4

21

27

4042

Price N/A

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