MOSFETs | FDMS2D4N03S

N-Channel PowerTrench® SyncFETTM 30V, 163A, 1.8mΩ

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Overview

The FDMS2D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A
  • Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A
  • High Performance Technology for Extremely Low rDS(on)
  • SyncFETTM Schottky Body Diode
  • 100% UIL Tested
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMS2D4N03S

Last Shipments

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

N

N-Channel

Single

30

16

3

163

74

-

2.34

1.8

-

28

4670

Price N/A

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